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嘉峪检测网 2024-04-20 09:30
下面是开关电源关键元件的各个参数中英文对照表,希望对您帮助。
肖特基二极管
Symbol |
Parameter |
中文翻译 |
VRRM |
Peak repetitive reverse voltage |
反向重复峰值电压 |
VRWM |
Working peak reverse voltage |
反向工作峰值电压 |
VR |
DC Blocking Voltage |
反向直流电压 |
VR(RMS) |
RMS Reverse Voltage |
反向电压有效值 |
IF(AV) |
Average Rectified Forward Current |
正向平均电流 |
IR |
Reverse Current |
反向电流 |
IFSM |
Non-Repetitive Peak Forward Surge Current |
浪涌电流 |
VF |
Forward Voltage |
正向直流电压 |
Cj |
Typical Junction Capactiance |
结电容 |
PD |
Power Dissipation |
耗散功率 |
Tj |
Operating Junction Temperature |
工作结温 |
Tstg |
Storage Temperature Range |
存储温度 |
Rth(j-a) |
Thermal Resistance from Junction to Ambient |
结到环境的热阻 |
二极管
Symbol |
Parameter |
中文翻译 |
VR |
Continuous reverse voltage |
反向直流电压 |
IF |
Continuous forward current |
正向直流电流 |
VF |
Forward voltage |
正向电压 |
IR |
Reverse current |
反向电流 |
Cd |
diode capacitance |
二极管电容 |
Rd |
diode forward resistance |
二极管正向电阻 |
Ptot |
total power dissipation |
功率总损耗 |
Tj |
Junction Temperature |
结温 |
Tstg |
storage temperature |
存储温度 |
TVS管
Symbol |
Parameter |
中文翻译 |
IPP |
Maximum reverse peak pulse current |
峰值脉冲电流 |
VC |
Clampling voltage |
钳位电压 |
IR |
Maximum reverse leakage current |
最大反向漏电流 |
V(BR) |
Breakdown voltage |
击穿电压 |
VRWM |
Working peak reverse voltage |
反向工作峰值电压 |
VF |
Forward voltage |
正向电压 |
IF |
Forward current |
正向电流 |
IT |
Test current |
测试电流 |
可控硅
Symbol |
Parameter |
中文翻译 |
VDRM |
Peak repetitive off-state voltage |
断态重复峰值电压 |
VRRM |
Peak repetitive reverse voltage |
反向重复峰值电压 |
IT(RMS) |
RMS On-state current |
额定通态电流 |
ITSM |
Non repetitive surge peak on-state current |
通态非重复浪涌电流 |
IGM |
Forward peak gate current |
控制极重复峰值电流 |
VTM |
peak forward on-state voltage |
通态峰值电压 |
IGT |
Gate trigger current |
控制极触发直流电流 |
VGT |
Gate trigger voltage |
控制极触发电压 |
IH |
Holding current |
维持电流 |
IDRM |
Peak repetitive off-state current |
断态重复峰值电流 |
IRRM |
Peak repetitive reverse current |
反向重复峰值电流 |
PG(AV) |
Average gate power dissipation |
控制极平均功率 |
Tj |
operating junction temperature range |
工作结温 |
Tstg |
storage temperature range |
存储温度 |
稳压管
Symbol |
Parameter |
中文翻译 |
VI |
input voltage |
输入电压 |
Vo |
output voltage |
输出电压 |
ΔVo |
Load regulation |
输出调整率 |
ΔVo |
Line regulation |
输入调整率 |
Iq |
quiescent current |
偏置电流 |
ΔIq |
quiescent current change |
偏置电流变化量 |
VN |
Output noise voltage |
输出噪声电压 |
RR |
Ripple rejection |
纹波抑制比 |
Vd |
dropout voltage |
降落电压 |
Isc |
short circuit current |
短路输出电流 |
Ipk |
peak current |
峰值输出电流 |
Topr |
operating junction temperature range |
结温 |
Tstg |
storage temperature range |
存储温度 |
43系列基准源
Symbol |
Parameter |
中文翻译 |
VKA |
Cathode voltage |
阴极电压 |
IK |
Cathode current range(continous) |
阴极电流 |
Iref |
Reference input current range,continous |
基准输入电流 |
PD |
Power dissipation |
耗散功率 |
Rth(j-a) |
Thermal resistance from junction to ambient |
结到环境的热阻 |
Topr |
operating junction temperature range |
工作结温 |
Tstg |
storage temperature range |
存储温度 |
Vref |
Reference input voltage |
基准输入电压 |
ΔVref(dev) |
Deviation of reference input voltage over full temperature range |
全温度范围内基准输入电压的偏差 |
ΔVref/ΔVKA |
Ratio of change in reference input voltage to the change in cathode voltage |
基准输入电压变化量与阴极电压变化量的比 |
ΔIref(dev) |
Deviation of reference input current over full temperature range |
全温度范围内基准输入电流的偏差 |
Imin |
Minimum cathode current for regulation |
稳压时最小负极电流 |
Ioff |
off-state cathode current |
关断状态阴极电流 |
|ZKA| |
Dynamic impedance |
动态阻抗 |
普通晶体管
Symbol |
Parameter |
中文翻译 |
VCBO |
Collector-Base voltage |
发射极开路,集电极-基极电压 |
VCEO |
Collector-emitter voltage |
基极开路,集电极-发射极电压 |
VEBO |
Emitter-base voltage |
集电极开路,发射极-基极电压 |
IC |
Collector current |
集电极电流 |
PC |
Collector power dissipation |
集电极耗散功率 |
Tj |
Junction temperature |
结温 |
Tstg |
storage temperature |
存储温度 |
V(BR)CBO |
Collector-Base breakdown voltage |
发射极开路,集电极-基极反向电压 |
V(BR)CEO |
Collector-emitter breakdown voltage |
基极开路,集电极-发射极反向电压 |
V(BR)EBO |
Emitter-base breakdown voltage |
集电极开路,发射极-基极反向电压 |
ICBO |
Collector cut-off current |
发射极开路,集电极-基极截止电流 |
IEBO |
Emitter cut-off current |
集电极开路,发射极-基极截止电流 |
ICEO |
Collector cut-off current |
基极开路,集电极-发射极截止电流 |
hFE |
DC current gain |
共发射极正向电流传输比的静态值 |
VCEsat |
Collector-emitter saturation voltage |
集电极-发射极饱和电压 |
VBEsat |
Base-emitter saturation voltage |
基极-发射极饱和电压 |
VBE |
Base-emitter voltage |
基极-发射极电压 |
fT |
Transition frequency |
特征频率 |
Cobo |
Collector output capacitance |
共基极输出电容 |
Cibo |
Collector input capacitance |
共基极输入电容 |
F |
Noise figure |
噪声系数 |
Ton |
Turn-on time |
开通时间 |
Toff |
Turn-off time |
关断时间 |
Tr |
Rise time |
上升时间 |
Ts |
Storage time |
存储时间 |
Tf |
Fall time |
下降时间 |
Td |
Delay time |
延迟时间 |
MOS管
Symbol |
Parameter |
中文翻译 |
ID |
Continuous drain current |
漏极直流电流 |
VGS |
Gate-source voltage |
栅-源电压 |
VDS |
Drain-source voltage |
漏-源电压 |
EAS |
single pulse avalchane energy |
单脉冲雪崩击穿能量 |
Rth(j-a) |
Thermal resistance from junction to ambient |
结到环境的热阻 |
Rth(j-c) |
Thermal resistance from junction to case |
结到管壳的热阻 |
V(BR)DSS |
Drain-source breakdown voltage |
漏源击穿电压 |
V(GS)th |
Gate threshold voltage |
栅源阈值电压 |
IGSS |
Gate-body leakage current |
漏-源短路的栅极电流 |
IDSS |
Zero gate voltage drain current |
栅-源短路的漏极电流 |
rDS(on) |
Drain-source on-resistance |
漏源通态电阻 |
gfs |
Forward trans conductance |
跨导 |
VSD |
Diode forward voltage |
漏源间体内反并联二极管正向压降 |
Ciss |
Input capacitance |
栅-源电容 |
Coss |
Output capacitance |
漏-源电容 |
Crss |
Reverse transfer capacitance |
反向传输电容 |
Rg |
Gate resistance |
栅极电阻 |
td(on) |
Turn-on delay time |
开通延迟时间 |
tr |
Rise time |
上升时间 |
td(off) |
Turn-off delay time |
关断延迟时间 |
tf |
Fall time |
下降时间 |
IDM |
Pulsed drain current |
最大脉冲漏电流 |
PD |
Power dissipation |
耗散功率 |
Tj |
operating junction temperature range |
结温 |
Tstg |
storage temperature range |
存储温度 |
来源:Internet